Product catalog MOSFET Type P channel Drain-source voltage (Vdss) 20V Continuous drain current (Id) 3.1A Power (Pd) 500mW On resistance (RDS(on)@Vgs,Id) 80mΩ 4.5V,1.4A Threshold voltage (Vgs(th)@Id) 1.5V 250uA Gate charge (Qg@Vgs) 2.7nC 2.5V Input capacitance (Ciss@Vds) 272pF 10V Reverse transfer capacitance (Crss@Vds) 44pF 10V Working temperature (minimum) -55℃ (Tj) Working temperature (maximum) +150℃ (Tj)